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this is information on a product in full production. march 2012 doc id 018969 rev 3 1/13 13 STFI13NK60Z n-channel 600 v, 0.48 , 13 a, zener-protected supermesh? power mosfet in i2pakfp package datasheet ? production data features fully insulated and low profile package with increased creepage path from pin to heatsink plate gate charge minimized very low intrinsic capacitance applications switching applications description this device is an n-channel zener-protected power mosfet developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. figure 1. internal schematic diagram order code v dss r ds(on) max i d p tot STFI13NK60Z 600 v <0.55 13 a 35 w pa k fp 2 i 1 2 3 (to-281) d(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STFI13NK60Z 13nk60z i2pakfp (to-281) tube www.st.com
contents STFI13NK60Z 2/13 doc id 018969 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STFI13NK60Z electrical ratings doc id 018969 rev 3 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 13 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 8.2 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 52 (1) a p tot total dissipation at t c = 25 c 35 w esd gate-source human body model (r=1,5 k , c=100 pf) 4 kv dv/dt (3) 3. i sd < 13 a, di/dt < 200 a/s, v dd = 80% v (br)dss . peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.6 c/w r thj-amb thermal resistance junction-amb max 62.5 c/w table 4. avalanche characteristics symbol parameter max value unit i ar repetitive or non repetitive avalanche current 10 (1) 1. limited by maximum junction temperature a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd = 50 v) 400 mj
electrical characteristics STFI13NK60Z 4/13 doc id 018969 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v, v ds = 600 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4.5 a 0.48 0.55 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =8 v, i d = 5 a -11 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 2030 210 48 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0 to 480 v - 125 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480 v, i d = 10 a v gs =10 v (see figure 16 ) - 66 11 33 92 nc nc nc
STFI13NK60Z electrical characteristics doc id 018969 rev 3 5/13 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r tu r n - o n d e l ay t i m e rise time v dd = 300 v, i d = 5 a, r g =4.7 , v gs =10 v (see figure 15 ) - 22 14 - ns ns t d(off) t f turn-off delay time fall time v dd =300 v, i d = 5 a, r g =4.7 , v gs =10 v (see figure 15 ) - 61 12 - ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480 v, i d = 10 a, r g =4.7 , v gs =10 v (see figure 15 ) - 10 9 20 - ns ns ns table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage (i d =0) igs=1 ma 30 - - v table 9. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 10 40 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs =0 -1.6v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s, v dd =35 v, t j =150 c - 570 4.5 16 ns c a
electrical characteristics STFI13NK60Z 6/13 doc id 018969 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
STFI13NK60Z electrical characteristics doc id 018969 rev 3 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature
electrical characteristics STFI13NK60Z 8/13 doc id 018969 rev 3 figure 14. maximum avalanche energy vs temperature
STFI13NK60Z test circuits doc id 018969 rev 3 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STFI13NK60Z 10/13 doc id 018969 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STFI13NK60Z package mechanical data doc id 018969 rev 3 11/13 figure 21. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
revision history STFI13NK60Z 12/13 doc id 018969 rev 3 5 revision history table 11. document revision history date revision changes 06-jul-2011 1 first release. 07-nov-2011 2 figure 2: safe operating area and figure 3: thermal impedance have been added. 20-mar-2012 3 document status promoted from preliminary data to production data. the package name has been updated.
STFI13NK60Z doc id 018969 rev 3 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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